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羅毅，男，出生于1960年2月，中國工程院院士，國家杰出青年科學基金獲得者，教育部“長江特聘教授”，北京信息科學與技術國家研究中心副主任、清華大學教授。1987年，他獲得日本東京大學碩士學位。1997年至2012年，羅毅任集成光電子學國家重點聯合實驗室主任。

人物經歷

教育經歷

工作經歷

1990.4-1992.3日本光計測技術開發株式會社中央研究所研究員?

1992.4-1992.12擔任清華大學電子工程系講師。

1992年4月回國，同年因學術成就突出被破格提升為清華大學電子工程系教授。

1995年晉升為博士生導師。

2021年6月，入選中國工程院2021年院士增選進入第二輪評審候選人名單。

2021年11月，當選中國工程院院士。

社會任職

國務院學位委員會第六屆、第七屆學科評議組電子科學與技術學科召集人；

第四屆國家 973 計劃信息科學領域專家咨詢組副組長；

863-8領域量子技術主題專家；

日本應用物理學雜志（日語 Journal of Applied Physics）Overseas Editor；

Applied Physics Express雜志 Overseas Editor；

ECOC(European Conference on Optical 傳播學)歐洲光通信會議程序委員會委員；

曾任IEEE量子光學雜志（Journal of Quantum 電子學）編委；

曾任IEEE光波技術雜志（Journal of Lightwave Technology）編委；

人才培養

講授課程

羅毅教授在清華大學任教期間，講授課程“集成光電子學概論”。

講學講座

2014年10月30日，羅毅開展名為《照亮世界的“新”光》講座。

2021年11月19日，北京大學電子學系邀請了羅毅教授做主題為“光波技術物理特性及其應用”的學術報告。

主要成就

研究方向

?固態照明關鍵技術

[2]氮化鎵基光電器件

?半導體信息光電子器件

科研成就

主要研究化合物半導體光電子器件及其集成應用技術，包括激光器、LED、光調制器、光探測器，及其在光纖通信、寬帶信息感知、半導體照明等領域的應用。發表學術論文367篇，授權中國發明專利34件。

研究概況

羅毅教授致力于研究增益耦合分布反饋激光器，與電吸收調制器單片集成的增益耦合半導體激光器，以及其他種類的半導體光電器件。在此期間，他利用分子束外延（MBE）首次研制出帶有損耗光柵的GaAlAs/砷化鎵多量子阱增益耦合DFB激光器，以及帶有電吸收調制器的單片集成增益耦合DFBB激光器。此外，他提出并使用LPE和MOVPE混合生長法得到周期調制載流子光柵的新型1.55微米InGaAsP / InP增益耦合DFB激光器結構。并在國內首次利用LPE制得了 1.3微米的InGaAsP / InP增益耦合DFB激光器。近年來，他的研究小組成功研制出了1.55微米InGaAsP / InP增益耦合DFB激光器和電吸收調制器的集成器件，這些器件可分別應用于2.5 Gb/s, 10 Gb/s和 40Gb/s的高速光纖系統。獲得2012 年國家技術發明二等獎。

從1999年起他開始了對氮化鎵基光電器件，其中包括高亮度藍、綠發光二極管和高功率HEMT器件的研究。發明網格狀二維藍寶石圖形襯底，并優化其外延條件，將位錯密度降低兩個數量級；提出了載流子俘獲與復合分別優化的臺階型In氮化鎵/GaN多量子阱結構，較常規量子阱結構藍光LED 的發光內量子效率提高了25 個百分點。系統優化了GaN 基異質材料ICP 刻蝕工藝，同時獲得更高刻蝕速率和優化刻蝕條件以得到更好表面形貌。獲得2011年國家科技進步二等獎。

自2003年起，他開始研究固態照明的關鍵技術。常規封裝白光 LED 用于照明時存在照明均勻性差、光能利用率低，導致半導體照明光源產品難以進入通用照明市場。他提出在常規封裝LED 器件外構置三維自由光學曲面將光線高效、均勻投射到被照明區域的思想和總光通量可簡單線性擴展的光源模組拓撲結構，發揮LED 體積小、可調控光線行為的優勢，同時提高照明均勻性和光能利用率。專利成果轉讓至合作企業并實現了產業化，形成照明光源系列產品。獲得2014年國家技術發明二等獎。

學術成果

發表SCI論文141 篇；各類論文他引總計2192次（SCI 他引860 次）、單篇最高104次，第一、二作者論文被11部國外教科書引述；第一發明人授權專利12項并轉讓7 項。

1. X. L. Mao, H. T. Li, Y. J. Han, and Y. Luo, Two-step design method for highly compact three-dimensional freeform optical system for LED surface light source, Optics Express, 22(106) (2014), A1491-A1506.

2. Y. J. Chen, Yijing, V. Krishnamurthy, Y. C. 賴姓, Y. Luo, Z. B. Hao, L. Wang, and S. T. Ho, Fabrication of sub-200 nm 氮化鋁GaN-氮化鋁 waveguide with cleaved end facet, Journal of Vacuum Science & Technology B, 32(4) (2014), 041207.

3. L. Niu, Z. B. Hao, Y. X. E, J. N. Hu, L. Wang, and Y. Luo, MBE-grown AlN-on-Si with improved crystalline quality by using 硅on-insulator substrates, Applied Physics Express, 7(6) (2014), 065505.

4. K. Wu, T. B. Wei, H. Y. Zheng, D. Lan, X. C. Wei, Q. Hu, H. X. Lu, J.X. Wang, Y. Luo, and J. M. Li, Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, Journal of Applied Physics, 115(12) (2014), 123101.

5. D. Liu, C. Z. 太陽, B. Xiong, and Y. Luo, Nonlinear 動力學 in integrated coupled DFB lasers with ultra-short delay, Optics express, 22(5) (2014), 5614-5622.

6. X. L. Mao, H. T. Li, Y. J. Han, and Y. Luo, A two-step design method for high compact rotationally symmetric optical system for LED surface light source, Optics Express, 22(102) (2014), A233-A247.

7. K. Wu, T. B. Wei, D. Lan, H. Y. Zheng, J. X. Wang, Y. Luo, and J. M. Li, Large-scale SiO2 photonic 晶體 for high efficiency GaN LEDs by nanospherical-lens lithography, Chinese Physics B, 23(2) (2014), 028504.

8. W. B. Lv, L. Wang, L. Wang, Y. C. Xing, D. Yang, Z. B. Hao, and Y. Luo, InGaN quantum dot green light-emitting diodes with negligible 藍色 shift of electroluminescence PEAK wavelength, Applied Physics Express, 7(2) (2014), 025203.

9. K. Wu, T. B. Wei, D. Lan, X. C. Wei, H. Y. Zheng, Y. Chen, H. X. Lu, K. Huang, J. X. Wang, Y. Luo, and J. M. Li, Phosphor-free nanopyramid white light-emitting diodes grown on {10 1ˉ 1} planes using nanospherical-lens photolithography, Applied Physics Letters, 103(24) (2013), 241107.

10. X. N. Zhao, B. Xiong, C. Z. 太陽, and Y. Luo, Low drive 電壓 optical phase modulator with novel InGaAlAs/ InAlAs 倍數quantum-barrier based 美國國家儀器(NI)有限公司n heterostructure, Optics express, 21(21) (2013), 24894-24903.

11. K. Wu, Y. Y. 張姓, T. B. Wei, B. Sun, H. Y. Zheng, H. X. Lu, Y. Chen, J. X. Wang, Y. Luo, and J. M. Li, Light extraction improvement of InGaN light-emitting diodes with large-面積 highly ordered ITO nanobowls photonic 晶體 via selfassembled nanosphere lithography, Aip Advances, 3(9)(2013), 092124.

12. K. Wang, Y. J. Han, H. Li, and Y. Luo, Overlapping-based optical freeform surface construction for extended lighting source, Optics express, 21(17) (2013), 19750-19761.

13. W. B. Lv, L. Wang, J. X. Wang, Y. C. Xing, J. Y. 鄭姓, D. 楊姓, Z. B. Hao, and Y. Luo, Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method, 日語 Journal of Applied Physics, 52(8S) (2013), 08JG13.

14. J. N. Hu, Z. B. Hao, L. Niu, Y. X. E, L. Wang, and Y. Luo, Atomically smooth and homogeneously N-polar AlN film grown on 硅 by alumination of Si3N4, Applied Physics Letters, 102(14) (2013), 141913.

15. H. T. Li, X. L. Mao, Y. J. Han, and Y. Luo, Wavelength Dependence of Colorimetric Properties of Lighting Sources Based on Multi-Color LEDs, Optics Express, 21(3)(2013), 3775-3783.

16. D. Liu, C. Z. Sun, B. Xiong and Y. Luo, Suppression of Chaos in Integrated Twin DFB Lasers for Millimeter-Wave Generation, Optics Express, 21(2)(2013), 2444-2451.

17. T. Shi, B. Xiong, C. Z. Sun, and Y. Luo, Back-to-Back UTCPDs With High Responsivity, High 色彩飽和度 Current and Wide Bandwidth, IEEE Photonics Technology Letters, 25(2)(2013), 136-139.

18. H. T. Li, S. C. Chen, Y. J. Han, and Y. Luo, A Fast Feedback Method to 設計 Easy-Molding Freeform Optical System with Uniform Illuminance and High Light Control Efficiency, Optics Express, 21(1)(2013), 1258-1269.

19. Z. B. Guo, L. Wang, Z. B. Hao, and Y. Luo, Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based 氫 sensor, Sensors and Actuators B: Chemical, 176(2013), 241-247.

20. W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, InGaN/GaN multilayer quantum dots 黃色green light-emitting diode with optimized GaN barriers, Nanoscale research letters, 7(1) (2012), 1-8.

21. K. Y. Qian, J. Ma, W. Fu, and Y. Luo, Research on scattering properties of phosphor for high power white light emitting diode based on Mie scattering theory, Acta Physica Sinica, 61(20) (2012), 204201.

22. 錢可元，馬駿，付偉，羅毅，基于Mie散射理論的白光發光二極管熒光粉散射特性研究，物理學報，61(20)(2012)，204201.

23. J. Y. Zheng, L. Wang, Z. B. Hao, and Y. Luo, L. X. Wang, and X. K. Chen, A GaN p-i-p-i-n Ultraviolet 雪崩 Photodiode, Chinese Physics Letters, 29(9)(2012), 097804.

24. J. X. Wang, L. Wang, L. Wang, Z. B. Hao, and Y. Luo, A. Dempewolf, M. Muller, F. Bertram And J. Christen, An Improved Carrier Rate Model to Evaluate Internal Quantum Efficiency and Analyze Efficiency Droop Origin of InGaN Based Light-Emitting diodes, Journal of Applied Physics, 112(2)(2012), 023107.

25. W. Zhao, L. Wang, J. X. Wang, W. B. Lv, Z. B. Hao, and Y. Luo, Growth and Characterization of Self-assembled Low-indium Composition InGaN Nanodots by Alternate Admittance of Precursors, Physica Status Solidi A-Applications and Materials Science, 209(6)(2012), 1096-1100.

26. Y. B., Hu, Z. B. Hao, J. N. Hu, L. Niu, L. Wang, and Y. Luo, Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy, Acta Physica Sinica, 61(23)(2012), 237804.

27. 胡懿彬，郝智彪，胡健楠，鈕浪，汪萊，羅毅，分子束外延生長InGaN/AlN量子點的組分研究，物理學報，61(23)(2012)，237804.

28. L. Niu, Z. B. Hao, J. N. Hu, Y. B. Hu, L. Wang, and Y. Luo, Improving the Emission Efficiency of MBE-Grown GaN/AlN QDs by Strain Control, Nanoscale Research Letters, 6(2011), 611.

29. W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, 密度 Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers, Chinese Physics Letters, 28(12)(2011), 128101

30. J. X. Wang, L. Wang, Z. B. Hao, and Y. Luo, Efficiency Droop Effect Mechanism in an InGaN/GaN 藍色 MQW LED, Chinese Physics Letters, 28(11)(2011), 118105

31. D. J. Hao, K. Y. Qian, and Y. Luo, Use of Adjusted Molecular 動力學 Method for Dot Pattern 設計 in Large Scale Light-Emitting Diode Edge-Lit Backlight Unit, Optical Engineering, 50(10)(2011), 104001.

32. W. C. Situ, Y. J. Han, H. T.Li, and Y. Luo, Combined Feedback Method for Designing a Free-Form Optical System with Complicated Illumination Patterns for an Extended LED Source, Optics Express, 19(S5)(2011), A1022-A1030.

33. S. Q. Li, L. Wang, Y. J. Han, Y. Luo, H. Q. Deng, J. S. Qiu, and J. Zhang, A new growth method of roughed p-GaN in GaN-based light emitting diodes, Acta Physica Sinica, 60(9)(2011), 098107.

34. 李水清，汪萊，韓彥軍，羅毅，鄧和清，丘建生，張潔，氮化鎵基發光二極管結構中粗化p型氮化鎵層的新型生長方法，物理學報，60(9)(2011)，098107.

35. T. Shi, B. Xiong, C. Z. Sun, and Y. Luo, Study on The 色彩飽和度 Characteristics of High-Speed Uni-Traveling-Carrier Photodiodes Based on Field Screening Analysis, Chinese Optics Letters, 9(8)(2011), 082302.

36. W. Zhao, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Theoretical Study on Critical Thicknesses of InGaN Grown on (0001) GaN, Journal of 晶體 Growth, 327(1)(2011), 202-204.

37. W. Zhao, L. Wang, J. X. Wang, and Y. Luo, Luminescence Properties of InxGa1？xN (x~0.04) Films Grown by Metal Organic Vapour Phase Epitaxy, Chinese Physics B, 20(7)(2011), 076101.

38. W. Zhao, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Edge Dislocation Induced Self-Assembly of InGaN Nano-Flower on GaN by Metal Organic Vapor Phase Epitaxy, Journal of Applied Physics, 110(1)(2011), 014311.

39. W. Zhao, L. Wang, W. B. Lv, L. Wang, J. X. Wang, Z. B. Hao, and Y. Luo, Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method, Japanese Journal of Applied Physics, 50(6)(2011), 065601

40. L. Wang, W. Zhao, Z. Hao, and Y. Luo, Photocatalysis of InGaN Nanodots Responsive to Visible Light, Chinese Physics Letters, 28(5)(2011), 057301.

41. J. Wang, Y. C. Xing, and Y. Luo, Ab Initio Study of GaN Periodically Substituted by Transition Metal for Intermediate Band Materials. Physics Status Solidi B, 248(4)(2011), 964-968.

42. L. L. Cao, Y. J. Han, Z. X. Feng, and Y. Luo, Reflector 設計 for Large-Size Spherical surface Sources, Optical Engineering, 50(2)(2011), 023001.

43. W. J. Fan, Z. B. Hao, E. Stock, J. B. Kang, Y. Luo, and D. Bimberg, Comparision between Two Types of Photonic-晶體 Cavities for Single Photon Emitters, 半導體 Science and Technology, 26(1)(2011), 014014.

44. J. X. Wang, L. Wang, W. Zhao, Z. B. Hao, and Y. Luo, Understanding Efficiency Droop Effect in InGaN/GaN 倍數Quantum-Well 藍色 Light-Emitting Diodes with Different Degree of Carrier Localization, Applied Physics Letters, 97(20)(2010), 201112.

45. L. Wang, L. Wang, F. Ren, W. Zhao, J. X. Wang, J. N. Hu, C. Zhang, Z. B. Hao, and Y. Luo, GaN grown on AlN/sapphire templates, Acta Physica Sinica, 59(11)( 2010), 8021-8025.

46. 汪萊，王磊，任凡，趙維，王嘉星，胡健楠，張辰，郝智彪，羅毅，AIN/藍寶石模板上生長的GaN研究，物理學報，59(11)(2010)，8021-8025.

47. F. Ren, Z. B. Hao, J. N. Hu, C. Zhang, and Y. Luo, Effects of AlN Nucleation Layer Thickness on 晶體 Quality of AlN Grown by 等離子體Assisted Molecular Beam Epitaxy, Chinese Physics B, 19(11)(2010), 116801.

48. Z. X. Feng, Y. Luo, and Y. J. Han, 設計 of LED Freeform Optical System for Road Lighting with High Luminance/Illuminance Ratio, Optics Express, 18(21)(2010), 22020-22031.

49. H. Yuan, C. Z. Sun, J. M. Xu, Q. Wu, B. Xiong, and Y. Luo, 設計 and fabrication of multilayer antireflection coating for optoelectronic devices by 等離子體 enhanced chemical vapor deposition, Acta Physica Sinica, 59(10)(2010), 7239-7244

50. 袁賀，孫長征，徐建明，武慶，熊兵，羅毅，基于等離子體增強化學氣相沉積技術的光電子器件多層抗反膜的設計和制作，物理學報，59(10)(2010)，7239-7244

51. L. Wang, J. Wang, W. Zhao, X. Zou, and Y. Luo, Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of 藍色 InGaN Multiple Quantum Wells, Chinese Physics B, 19(7)(2010), 076803.

52. F. Ren, Z. B. Hao, C. Zhang, J. N. Hu, and Y. Luo, High Quality AlN with Thin Interlayer Grown on a Sapphire Substrate by 等離子體Assisted Molecular Beam Epitaxy, Chinese Physics letters, 27(6)(2010), 068101.

53. W. J. Fan, Z. B. Hao, Z. Li, Y. S. Zhao, and Y. Luo. Influence of Fabrication Error on the Characteristics of a 2D Photonic-晶體 Cavity. IEEE Journal of Lightwave Technology, 28(10)(2010), 1455-1458.

54. C. Zhang, Z. B. Hao, F. Ren, J. N. Hu, and Y. Luo, Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in 等離子體Assisted Molecular Beam Epitaxy, Chinese Physics letters, 27(5)(2010), 058101.

55. Y. Luo, Z. X. Feng, Y. J. Han, and H. T. Li, 設計 of Compact and Smooth Free-Form Optical System with Uniform Illuminance for LED Source, Optics Express, 18(9)(2010), 9055-9063.

56. J. X. Wang, L. Wang, W. Zhao, X. Zou, and Y. Luo, Study on Internal Quantum Efficiency of 藍色 InGaN 倍數Quantum-Well with an InGaN Underneath Layer, Science In China Series E-Technological Sciences, 53(2)(2010), 306-308.

57. F. Ren, Z. B. Hao, L. Wang, L. Wang, H. T. Li, and Y. Luo, Effects of SiNx on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN High Electron Mobility Transistors, Chinese Physics B, 19(1)(2010), 017306.