邊繼明，1973年生，現(xiàn)任大連理工大學(xué)物理與光電工程學(xué)院教授、博士生導(dǎo)師。他曾被遼寧省百千萬人才工程“百人層次”入選，并被評(píng)為大連市首批領(lǐng)軍后備人才。此外，他還曾擔(dān)任該學(xué)院副教授一職。
個(gè)人簡歷
1998年獲大連輕工學(xué)院無機(jī)非金屬材料專業(yè)碩士學(xué)位, 2005年獲中國科學(xué)院上海硅酸鹽研究所材料科學(xué)與工程專業(yè)博士學(xué)位。2005年6月通過大連理工大學(xué)特殊評(píng)審為副教授, 2008年6月通過大連理工大學(xué)特殊評(píng)審為博士生導(dǎo)師。博士期間（2002－2005）起一直從事新一代寬帶隙半導(dǎo)體氧化鋅光電材料與器件的研究工作。參加過中科院百人計(jì)劃基金、國家自然科學(xué)基金、上海市科委光科技行動(dòng)計(jì)劃等多項(xiàng)科研課題, 已在國內(nèi)外學(xué)術(shù)刊物和會(huì)議上發(fā)表論文近50篇。在ZnO材料與光電器件方面
獲得了國際水平的原創(chuàng)性研究成果, 多篇論文在國際權(quán)威刊物美國應(yīng)用物理快報(bào)（Applied Physics Letters）上發(fā)表。另外, 申請(qǐng)者2008至2009年曾在新西蘭奧克蘭大學(xué)國際納米材料與器件專家WeiGao教授（新西蘭皇家科學(xué)院院士）研究組訪學(xué)一年, 專門從事一維ZnO 納米線/棒的生長和發(fā)光器件研究。擔(dān)任國家自然科學(xué)基金同行評(píng)議專家，中科院國際材料物理中心協(xié)作成員等職。遼寧省百千萬人才工程“千人層次”入選者。
近年發(fā)表的代表論文：
1) J. M. bian(邊繼明), X. M. Li, C. Y. zhang, et al. “Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis”, Applied Physics Letters, 84(19), p.3783-3785 (2004).
2) J. M. Bian(邊繼明), X. M. Li, C. Y. Zhang, et al. “P-type ZnO films by monodoping of nitrogen and ZnO based p-n homojunctions.” Applied Physics Letters, 85(18), p. 4070-4072 (2004).
3) J. M. Bian(邊繼明), X. M. Li, X. D. Gao, et al. “Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis”, Applied Physics Letters, 84(4), p.541-543 (2004).
4) Ji Ming Bian(邊繼明), Xiao Min Li, Li Dong Chen, et al.“Properties of undoped n-type ZnO film and N-In codoped p-type ZnO film deposited by ultrasonic spray pyrolysis”, Chemical Physics Letters, 393(3), p. 256-259(2004).
5) Jiming Bian(邊繼明), Weifeng Liu, Hongwei Liang, et al., “ Room 溫度 electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ultrasonic spray pyrolysis”, Chemical Physics Letters, 430, p. 183-187(2006).
6) Jiming Bian(邊繼明), Yingmin Luo, Jingchang Sun, et al., “Synthesis and 溫度 dependent photoluminescence of Zn1-xMgxO films grown by ultrasonic spray pyrolysis”, Journal of Materials Science, 42 (20): 8461-8464 (2007).
7) Ji Ming Bian(邊繼明), Xiao Min Li, Tong Lai Chen, et al., “Preparation of high quality MgO thin films by ultrasonic spray pyrolysis”, Applied Surface Science, 228(1-4), p. 297-301(2004).
8) Ji Ming Bian(邊繼明),Xiao Min Li, et al., “Growth and Characterization of High Quality MgO Thin Films by Ultrasonic Spray Pyrolysis”, Key Engineer Material, 280-283, p. 1171-1175(2005).
9) Jiming Bian(邊繼明), Weifeng Liu, et al., “Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure”, Journal of Materials Processing Technology, 184, p.451-454, (2007).
10)邊繼明, 李效民, 高相東, “襯底溫度對(duì)ZnO薄膜生長過程及微觀結(jié)構(gòu)的影響研究”, 無機(jī)材料學(xué)報(bào), 19(3), p. 641－646(2004).
11)邊繼明, 李效民, 張燦云, 趙俊亮, “ZnO基薄膜載流子傳輸特性研究”, 中國有色金屬學(xué)報(bào), 14(s3), p. 478－481( 2004).
12)邊繼明, 李效民, 趙俊亮, 于偉東, “PLD法生長高質(zhì)量ZnO薄膜及其光電導(dǎo)特性研究”, 無機(jī)材料學(xué)報(bào), 21(3), p. 701－706(2006).
13)邊繼明, 劉維峰, 胡禮中, 梁紅偉, “超聲噴霧熱解法生長氧化鋅同質(zhì)p-n結(jié)及其電致發(fā)光性能研究”, 無機(jī)材料學(xué)報(bào), 22(1), p. 173－175 (2007).
14) 邊繼明, 劉維峰, 梁紅偉, 孫景昌, 駱英民, 胡禮中, 杜國同, “超聲噴霧熱解法生長氧化鋅基發(fā)光原型器件研究”, 光電子。激光, 17, p.79－80, 2006.
15) 邊繼明, 李效民, 張燦云, 趙俊亮, 于偉東, 高向東, “氮－共摻雜ZnO薄膜光學(xué)性能研究”, 液晶與顯示, 20(3), 200－204, 2005.
16) 邊繼明, 杜國同, 胡禮中, 李效民, 趙俊亮, “脈沖激光沉積（PLD）法生長高質(zhì)量ZnO薄膜及其發(fā)光性能”, 發(fā)光學(xué)報(bào), 27(6),958-962,2006.
17) Qingwei Li, Jiming Bian(邊繼明), Jingchang Sun, et al., “Controllable growth of well-aligned ZnO nanorod arrays by low-溫度 wet chemical bath deposition method ”, Applied Surface Science, 256, 1698-1702(2010). (通訊聯(lián)系人)
18) G. T. Du, W. F. Liu, J. M. Bian(邊繼明), et al., “Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis ”, Applied Physics Letters, 89, p.052113 (2006).
19) Yingmin Luo, Jiming Bian(邊繼明), Jingchang Sun, et al., “Deposition and tunable photoluminescence of Zn1-x(Mg,Cd)xO film system ”, Journal of Materials Processing Technology, 189, 473-476 , (2007). (通迅聯(lián)系人)
20) W. F. Liu, J. M. Bian(邊繼明), L. Z. Hu, et al., “Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition ”, Solid State Communications, 142, 655-658, (2007). (通迅聯(lián)系人)
21) Tianpeng Yang, Jiming Bian(邊繼明), Hongwei Liang, et al., “High quality p-type ZnO films grown by low 壓強(qiáng) plasma-assisted MOCVD with N2O RF plasma doping source”, Journal of Materials Science, 204, 481-485 (2008). (通訊聯(lián)系人)
22) T. P. Yang, H. C. Zhu, J. M. Bian(邊繼明), et al., “Room 溫度 electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD”, Materials Research Bulletin, 43, 3614-3620(2008). (通訊聯(lián)系人)
23) WANG Jing-Wei, BIAN Ji-Ming(邊繼明), et al., “Enhanced p-type ZnO films through nitrogen and argentum codoping grown by ultrasonic spray pyrolysis”, Chinese Physics Letters, 25(9), 3400-3402(2008). (通訊聯(lián)系人)
24) 王經(jīng)緯, 邊繼明, 孫景昌, 梁紅偉, 趙澗澤, 杜國同, “Ag摻雜p型ZnO薄膜及其光電性能研究”, 物理學(xué)報(bào), 57(8), 5212-5216(2008). (通訊聯(lián)系人)
25) Jingchang Sun, Jiming Bian(邊繼明), Hongwei Liang, et al., “Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties”, Applied surface Science, 253, 5161-5165 (2007).
26) C. W. Zou, X. D. Yan, J. Han, R. Q. Chen, J. M. Bian(邊繼明), E. Haemmerle, W. Gao, “Preparation and enhanced photoluminescence property of ordered ZnO/TiO2 bottlebrush nanostructures”, Chemical Physics Letters, 476, 84-88 (2009).
27) C. W. Zou, J. M. Bian(邊繼明), “Comment on “Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods” APPL Phys. Lett. 94, 041906, 2009”, Applied Physics Letters, 95, 126101 (2009).
28) J. C. Sun, J. Z. Zhao, H. W. Liang, J. M. Bian(邊繼明), et al., “Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO:As/GaAs structure”, Applied Physics Letters, 90, p.121128 (2007).
29) Jun-Liang Zhao, Xiao-Min Li , Ji-Ming Bian(邊繼明), et al., “Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis ”, Thin Solid Films, 515, 1763-1766, (2006).
30) J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian(邊繼明), et al., “Eelectroluminescence from n-ZnO/p-ZnO:Sb homojunction light emitting diode on sapphire substrate with metal-organic Precursors doped p-type ZnO layer grown by MOCVD technology”, Journal of Physics D: Applied Physics, 41 (19), 195110 (2008).
31) J. Z. Zhao, H. W. Liang, J. C. Sun, Q. J. Feng, J. M. Bian(邊繼明),et al., “p-Type Sb-Doped ZnO Thin Films Prepared by Metal organic Chemical Vapor Deposition Using Metallorganic Dopant”, Electrochem. SOLIDState Lett. 11, 12 H323 (2008).
32) Zhao Z W, Hu L Z, Zhang H Q, Sun J C, Bian J M(邊繼明), et al., “Effect of Different Substrate 溫度 on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates”, Chinese Physics Letters, 26(5), 057305(2009).
33) J. C. Sun, T. P. Yang, G. T. Du, H. W. Liang, J. M. Bian(邊繼明), “ Influence of annealing atmosphere on ZnO thin films grown by MOCVD” , Applied Surface Science, 253, 2066-2070, (2006).
34) Sun Jing-Cang, Liang Hong-Wei, Zhao Jian-Ze, Bian Ji-Ming(邊繼明), et al., “Realization of ultraviolet electroluminescence from ZnO homojunction fabricated on silicon substrate with p-type ZnO:N layer formed by radical N2O doping”, Chinese Physics Letters, 25(12), 4345-4347(2008).
35) J. C. Sun, H. W. Liang, J. Z. Zhao, J. M. Bian(邊繼明), et al., “Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient”, Chemical Physics Letters, 460 (4-6), 548-551 (2008).
36) Jun Liang Zhao, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)”, Journal of Crystal Growth, 276, p.507-512, (2005).
37) Can Yun Zhang, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films by ultrasonic spray pyrolysis”, Solid State Communications, 132, p. 75-78 (2004).
38) Can Yun Zhang, Xiao Min Li, Ji Ming Bian(邊繼明), et al., “Nitrogen and aluminum codoped p-type ZnO films and ZnO p-n homojunctions”, Surface and Coating Technology, 198, P. 253-256 (2005).
39) Jun-Liang Zhao, Xiao-Min Li, Ji-Ming Bian(邊繼明), et al., “Growth, electrical and optical properties of N-doped p-type ZnO thin films grown by ultrasonic spray pyrolysis”, Journal of Crystal Growth, 280, P. 495-501 (2005).
40) Zhang X., Li X. M., Chen T. L., Ji-Ming Bian(邊繼明), et al., “Structural and optical properties of Zn1-xMgxO thin films deposited by ultrasonic spray pyrolysis”, Thin Solid Films, 492, p.248-252(2005).
41) 趙俊亮, 李效民, 邊繼明, 張燦云, 于偉東, 高向東, “噴霧熱解法生長N摻雜ZnO薄膜機(jī)理分析”, 無機(jī)材料學(xué)報(bào), 20, p. 959－964(2005).
近五年申請(qǐng)的代表專利：
1. 邊繼明, 李效民, 高相東, 于偉東
“一種p型氧化鋅薄膜的制備方法”。專利號(hào)：03151096 (已授權(quán))
2. 邊繼明, 李效民, 高相東, 于偉東
“一種氧化鋅同質(zhì)結(jié)p-n結(jié)的制備方法”。專利號(hào)：200310109139(已授權(quán))
3. 梁紅偉, 杜國同, 趙澗澤, 孫景昌, 邊繼明, 胡禮中
“一種Sb摻雜制備p型ZnO薄膜方法”專利號(hào)：200810010104(已授權(quán))
4. 李效民, 邊繼明, 張燦云, 趙俊亮
“摻氮空穴型氧化鋅薄膜材料的噴霧熱解制備方法”。申請(qǐng)?zhí)枺?00410025029.1
5. 李效民, 張燦云, 邊繼明, 于偉東, 高相東
“一種氮鋁共摻雜空穴型ZnO薄膜材料的制備工藝”。申請(qǐng)?zhí)枺?00410089074.3.
6. 邊繼明, 杜國同, 胡禮中, 劉維峰, 王新盛, 梁紅偉
“一種氧化鋅材料發(fā)光二極管的制備方法”。申請(qǐng)?zhí)枺?00510200730.7
7. 梁紅偉, 孫景昌, 杜國同, 趙澗澤, 邊繼明, 胡禮中
“一種N摻雜的ZnO的受主激活方法”申請(qǐng)?zhí)枺?00810010103.0
參考資料 >